default search action
"Implementation of high-k and metal gate materials for the 45nm node and ..."
S. Beckx et al. (2005)
- S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V. Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, S. Degendt:
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development. Microelectron. Reliab. 45(5-6): 1007-1011 (2005)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.