"Degradation of high-K LA2O3 gate dielectrics using ..."

Enrique Miranda et al. (2005)

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DOI: 10.1016/J.MICROREL.2005.07.022

access: closed

type: Journal Article

metadata version: 2020-02-22

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Enrique Miranda, Joel Molina Reyes, Y. Kim, Hiroshi Iwai:
Degradation of high-K LA₂O₃ gate dielectrics using progressive electrical stress. Microelectron. Reliab. 45(9-11): 1365-1369 (2005)

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