Physics Letters A 380 (2016) 3509–3513
Contents lists available at ScienceDirect
Physics Letters A
www.elsevier.com/locate/pla
Remarkable charge-trapping performance based in Zr
0.5
Hf
0.5
O
2
with
nanocrystal Ba
0.6
Sr
0.4
TiO
3
blocking layer for nonvolatile memory
device
X.B. Yan
a,b,∗
, X.L. Jia
a
, T. Yang
a
, J.H. Zhao
a
, Y.C. Li
a
, Z.Y. Zhou
a
, Y.Y. Zhang
a
a
Key Laboratory of Digital Medical Engineering of Hebei Province, Key Laboratory of Optoelectronic Information Materials of Hebei Province, College of Electron
and Information Engineering, Hebei University, Baoding 071002, PR China
b
Department of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore
a r t i c l e i n f o a b s t r a c t
Article history:
Received
15 May 2016
Received
in revised form 10 August 2016
Accepted
12 August 2016
Available
online 18 August 2016
Communicated
by R. Wu
Keywords:
Charge
trapping
Nanocrystal
Ba
0.6
Sr
0.4
TiO
3
blocking layer
Zr
0.5
Hf
0.5
O
2
Nonvolatile memory
Two kinds of charge trapping memory device with Au/Zr
0.5
Hf
0.5
O
2
(ZHO)/SiO
2
/p-Si and Au/Ba
0.6
Sr
0.4
TiO
3
(BST)/Zr
0.5
Hf
0.5
O
2
/SiO
2
/p-Si structure were fabricated and investigated. The double BST/ZHO films exhibit
a larger memory window of 7.36 V under ±14 V sweeping voltages in its C–V curve and the device
has good charge retention properties with only small charge loss of ∼5% after more than 10
4
s. The
good characteristics are attributed to the inter-diffusion between BST and ZHO where more deep defect
sites were created after RTA treatment, which provides high potential barriers for the trapped charges to
tunnel back to the silicon substrate. Furthermore, the nanocrystal in the BST layer increases the tunneling
barrier of tunneling current into the gate and effectively restrains the leakage of storage charge from
blocking layer, which improves the charge retention characteristic.
© 2016 Elsevier B.V. All rights reserved.
Introduction
The charge trapping memory (CTM) devices have been stud-
ied
for many years, such as silicon-oxide–nitride-oxide–silicon
(SONOS) type memory device. CTM as an important component of
the nonvolatile flash memories has found many wide applications
due to its good endurance and retention, fast program/erase speed
and low operating voltage characteristics over the floating-gate de-
vices
[1,2]. However, with the further scaling down, few electrons
for information storage and low charge trapping efficiency are the
crucial problems for nanoscale SONOS devices [3]. To confront the
challenge, bandgap-engineered charge trapping layer and high-k
materials
in which oxygen vacancy is thought to be the main de-
fect
have been proposed to be used in the CTM devices to obtain
a better charge trapping capability and retention characteristics [4,
5].
HfO
2
is considered as the most promising dielectric among the
high-k dielectrics. It has large band-gap, relatively high dielectric
*
Corresponding author at: Key Laboratory of Digital Medical Engineering of Hebei
Province, Key Laboratory of Optoelectronic Information Materials of Hebei Province,
College of Electron and Information Engineering, Hebei University, Baoding 071002,
PR China.
E-mail
address: xiaobing_yan@126.com (X.B. Yan).
constant (22∼25) and high thermal stability [6,7]. In addition, the
electrical properties of HfO
2
can be improved by doping different
elements such as Al, Zr and Ta [8,9]. On the other hand, it is well
known that ZrO
2
is isomorphous to HfO
2
with a similar structure.
And oxygen vacancy is verified as main defect in ZrO
2
and HfO
2
which has been investigated theoretically and experimentally [10,
11].
Furthermore, Zr-doping in HfO
2
can stabilize the tetragonal
phase of HfO
2
[12,13], and enhance the k-value of HfO
2
[14]. In
addition, barium strontium titanate (BST) is a kind of high dielec-
tric
coefficient of ferroelectric material, which is widely used in the
dynamic random access memory (DRAM) due to its strong non-
linear,
small leakage flow, large capacitance rate and anti-fatigue.
The dielectric properties of BST film are related to the composi-
tion
and significantly influenced by the forming process and the
annealing process. Therefore, in our case, we investigated the ZHO
films with and without nanocrystal BST films as blocking layer to
construct CTM devices. We focus on two CTM devices with the
structures of Au/ZHO/SiO
2
/p-Si and Au/BST/ZHO/SiO
2
/p-Si, and the
latter shows a distinguished charge-trapping efficiency and a good
retention characteristic. And we investigated the microstructure in-
formation
through high resolved transmission electron microscopy
(HRTEM) to make a further study about its charge trapping mech-
anism.
http://dx.doi.org/10.1016/j.physleta.2016.08.022
0375-9601/
© 2016 Elsevier B.V. All rights reserved.
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