0.5
0.8
1
1.2
1.5
1.8
2
0 5 10 15 20 25 30 35
Input Voltage (V)
Ground Pin Current (µA)
T
A
= −40°C
T
A
= +25°C
T
A
= +85°C
TPS70912
G014
TPS709xx
EN
IN
OUT
V
IN
V
OUT
1 Fm
2.2 Fm
GND
NC
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SBVS186
TPS709
ZHCS814G –MARCH 2012–REVISED NOVEMBER 2015
TPS709 具具有有使使能能功功能能的的 150mA、、30V、、1μA I
Q
稳稳压压器器
1
1 特特性性
1
• 超低 I
Q
：1μA
• 反向电流保护
• 低 I
SHUTDOWN
：150nA
• 输入电压范围：2.7V 至 30V
• 支持 200mA 峰值输出
• 在温度范围内精度为 2%
• 可提供固定输出电压：
1.2V 至 6.5V
• 热关断及过流保护功能
• 封装：SOT-23-5、WSON-6
2 应应用用范范围围
• Zigbee™网络
• 家庭自动化
• 计量
• 电子秤
• 便携式功率工具
• 遥控器件
• 无线听筒，智能电话，掌上电脑 (PDA)，无线局域
网 (WLAN)，和其它个人电脑 (PC) 扩展卡
• 大型家电
3 说说明明
TPS709 系列线性稳压器是针对功耗敏感型应用而设计
的超低静态电流 器件。一个精密带隙和误差放大器在
温度范围内的精度为 2%。这些器件的静态电流仅为
1µA，因此对于由电池供电、要求闲置状态功耗非常小
的常开系统而言，这是非常理想的解决方案。为了增加
安全性，这些器件还具有热关断、电流限制和反向电流
保护功能。
关断模式通过将 EN 引脚拉为低电平进行使能。该模式
的关断电流低至 150nA（典型值）。
TPS709 系列采用 WSON-6 和
SOT-23-5 封装。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸（（标标称称值值））
TPS709
SOT-23 (5) 2.90mm x 1.60mm
WSON (6) 2.00mm x 2.00mm
(1) 要了解所有可用封装，请参见数据表末尾的封装选项附录。
典典型型应应用用电电路路 接接地地电电流流与与 V
IN
和和温温度度间间的的关关系系
2
TPS709
ZHCS814G –MARCH 2012–REVISED NOVEMBER 2015
www.ti.com.cn
版权 © 2012–2015, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用范范围围................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 4
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 6
6.6 Typical Characteristics.............................................. 7
7 Detailed Description............................................ 13
7.1 Overview ................................................................. 13
7.2 Functional Block Diagram ....................................... 13
7.3 Feature Description................................................. 13
7.4 Device Functional Modes........................................ 14
8 Application and Implementation ........................ 15
8.1 Application Information............................................ 15
8.2 Typical Application ................................................. 15
9 Power Supply Recommendations...................... 16
9.1 Power Dissipation ................................................... 16
10 Layout................................................................... 17
10.1 Layout Guidelines ................................................. 17
10.2 Layout Example .................................................... 17
11 器器件件和和文文档档支支持持 ..................................................... 18
11.1 器件支持................................................................ 18
11.2 文档支持................................................................ 18
11.3 社区资源................................................................ 18
11.4 商标 ....................................................................... 19
11.5 静电放电警告......................................................... 19
11.6 Glossary................................................................ 19
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 19
4 修修订订历历史史记记录录
注：之前版本的页码可能与当前版本有所不同。
Changes from Revision F (December 2014) to Revision G Page
• Added DBV package for TPS709A to Pin Configurations and Functions section.................................................................. 4
• Added DBV package for TPS709B to Pin Configurations and Functions section.................................................................. 4
• Added TPS709A and TPS709B to Pin Functions table ......................................................................................................... 4
• Moved operating junction temperature from Electrical Characteristics to Recommended Operating Conditions ................. 5
Changes from Revision E (November 2013) to Revision F Page
• 已更改标题格式以符合最新数据表标准................................................................................................................................... 1
• 已添加 ESD
额定值
表，
特性 描述
部分，
器件功能模式
，
应用和实施
部分，
电源相关建议
部分，
布局
部分，
器件和文
档支持
部分以及
机械、封装和可订购信息
部分........................................................................................................................ 1
• 已从文档中删除 SOT-223-4 封装 .......................................................................................................................................... 1
• 已删除
低压降
特性 要点） ...................................................................................................................................................... 1
• 已更改封装特性要点：已删除 SOT-223-4 和脚注 ................................................................................................................. 1
• 已删除
说明
部分最后一段中的 SOT-223-4 .............................................................................................................................. 1
• 删除了第 1 页的引脚分配图 ................................................................................................................................................... 1
• Deleted DCY package and footnote from Pin Configurations section ................................................................................... 4
• Changed Pin Functions table: changed title and deleted DCY package................................................................................ 4
• Changed EN pin description in Pin Functions table .............................................................................................................. 4
• Deleted the word 'range' from the last 2 rows of the Absolute Maximum Ratings table........................................................ 5
• Deleted DCY column from Thermal Information table ........................................................................................................... 5
• Added description text to the enabled mode discussion in the Device Functional Modes section ..................................... 14
3
TPS709
www.ti.com.cn
ZHCS814G –MARCH 2012–REVISED NOVEMBER 2015
Copyright © 2012–2015, Texas Instruments Incorporated
Changes from Revision D (October 2013) to Revision E Page
• 已将 DRV (SON-6) 封装状态从“产品预览”改为“量产数据”...................................................................................................... 1
• 已删除 脚注 1 中的 SON-6 封装
（特性
部分） ...................................................................................................................... 1
• 已删除 引脚分配图注释中的 DRV 封装................................................................................................................................... 1
• Deleted DRV from pinout note in the Pin Configurations section........................................................................................... 4
Changes from Revision C (June 2013) to Revision D Page
• 已将器件状态从“量产数据”改为“混合状态”.............................................................................................................................. 1
• 已更改 最后一个 特性 要点：已添加脚注并已更改器件顺序................................................................................................... 1
• 已添加 在引脚分配图中添加了注释......................................................................................................................................... 1
• Added product preview footnote to pin configurations ........................................................................................................... 4
Changes from Revision B (November 2012) to Revision C Page
• 已添加 DCY (SOT-223) 和 DRV (SON) 封装至数据表 ........................................................................................................... 1
• 已将 I
Q
特性要点的值从 1.35µA 改为 1µA.............................................................................................................................. 1
• 已将
说明
部分第一段中的静态电流值从 1.35µA 改为 1µA ...................................................................................................... 1
• 已将
说明
部分第二段中的“泄漏”改为“关断”。 .......................................................................................................................... 1
• 添加了典型应用电路 ............................................................................................................................................................... 1
• Added DCY and DRV packages to Pin Configuration section .............................................................................................. 4
• Added DCY and DRV packages to Pin Descriptions table ................................................................................................... 4
• Added DRV and DCY packages to Thermal Information table .............................................................................................. 5
• Changed ground pin current typical values for I
OUT
= 0-mA test conditions........................................................................... 6
Changes from Revision A (October 2012) to Revision B Page
• Added Pin Configuration section ............................................................................................................................................ 4
• Changed Line regulation and Load regulation parameters in Electrical Characteristics table............................................... 6
• Changed I
GND
parameter test conditions in Electrical Characteristics table........................................................................... 6
• Changed I
SHUTDOWN
parameter test conditions in Electrical Characteristics table .................................................................. 6
• Changed footnote 4 in Electrical Characteristics table........................................................................................................... 6
• Changed second paragraph of Dropout Voltage section ..................................................................................................... 13
Changes from Original (March 2012) to Revision A Page
• 已将器件状态从“产品预览”改为“量产数据”.............................................................................................................................. 1
EN
NC
OUT
GND
IN
1
2
3
5
4
IN
NC
EN
6
5
4
OUT
NC
GND
1
2
3
GND
EN
NC
GND
IN
OUT
1
2
3
5
4
OUT
NC
IN
GND
EN
1
2
3
5
4
4
TPS709
ZHCS814G –MARCH 2012–REVISED NOVEMBER 2015
www.ti.com.cn
Copyright © 2012–2015, Texas Instruments Incorporated
5 Pin Configuration and Functions
TPS709: DBV Package
5-Pin SOT-23
Top View
TPS709A: DBV Package
5-Pin SOT-23
Top View
TPS709B: DBV Package
5-Pin SOT-23
Top View
DRV Package
6-Pin WSON
Top View
Pin Functions
PIN
I/O DESCRIPTION
NAME
DRV DBV
TPS709 TPS709 TPS709A TPS709B
EN 4 3 5 5 I
Enable pin. Drive this pin high to enable the device. Drive this pin low
to put the device into low current shutdown. This pin can be left
floating to enable the device. The maximum voltage must remain
below 6.5 V.
GND 3 2 2 1 — Ground
IN 6 1 3 2 I Unregulated input to the device
NC 2, 5 4 4 4 — No internal connection
OUT 1 5 1 3 O
Regulated output voltage. Connect a small 2.2-µF or greater ceramic
capacitor from this pin to ground to assure stability.
Thermal pad — — — —
The thermal pad is electrically connected to the GND node. Connect
this pad to the GND plane for improved thermal performance.
5
TPS709
www.ti.com.cn
ZHCS814G –MARCH 2012–REVISED NOVEMBER 2015
Copyright © 2012–2015, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
specified at T
J
= –40°C to 125° C (unless otherwise noted); all voltages are with respect to GND
(1)
MIN MAX UNIT
Voltage
V
IN
–0.3 32
VV
EN
–0.3 7
V
OUT
–0.3 7
Maximum output current I
OUT
Internally limited
Output short-circuit duration Indefinite
Continuous total power dissipation P
DISS
See Thermal Information
Operating junction temperature, T
J
–55 150 °C
Storage temperature, T
stg
–55 150 °C
(1) JEDEC document JEP155 states that 2-kV HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 500-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged device model (CDM), per JEDEC specification JESD22-C101
(2)
±500
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V
IN
Input voltage 2.7 30 V
V
OUT
Output voltage 1.2 6.5 V
V
EN
Enable voltage 0 6.5 V
T
J
Operating junction temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.4 Thermal Information
THERMAL METRIC
(1)
TPS709
UNITDBV DRV
5 PINS 6 PINS
R
θJA
Junction-to-ambient thermal resistance 212.1 73.1 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 78.5 97.0 °C/W
R
θJB
Junction-to-board thermal resistance 39.5 42.6 °C/W
ψ
JT
Junction-to-top characterization parameter 2.86 2.9 °C/W
ψ
JB
Junction-to-board characterization parameter 38.7 42.9 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance N/A 12.8 °C/W
