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【TI OPA855 运算放大器详解】 TI OPA855是一款高性能、高速的运算放大器，特别适合于需要宽增益带宽积和低噪声的应用。这款运算放大器的主要特点包括： 1. **高增益带宽积**：OPA855的增益带宽积高达8GHz，这使得它在处理高速信号时表现出色，能够应对各种高频应用场景。 2. **稳定的增益**：该器件提供了最小7V/V的稳定增益，确保了放大器的输出稳定性和信号质量。 3. **低输入电压噪声**：OPA855的输入电压噪声仅为0.98nV/√Hz，这意味着在高灵敏度应用中，它能减少不必要的噪声干扰。 4. **高速压摆率**：高达2750V/μs的压摆率保证了快速响应能力，对于高速信号的放大尤为关键。 5. **低输入电容**：OPA855的共模输入电容为0.6pF，差动输入电容为0.2pF，这有助于降低信号失真并提高系统的整体性能。 6. **宽输入共模范围**：输入共模范围从正电源电压的0.4V以下到负电源电压的1.1V以上，为设计提供了更大的灵活性。 7. **3VPP的总输出摆幅**：这使得OPA855可以驱动各种负载，而不会出现饱和或失真问题。 8. **电源电压范围**：支持3.3V至5.25V的电源电压，适合低功耗应用。 9. **低静态电流**：静态电流仅为17.8mA，降低了功耗，提高了效率。 10. **封装形式**：采用8引脚WSON封装，尺寸小巧，适合空间有限的设计。 **应用领域**： OPA855广泛应用于高速跨阻放大器、激光测距、CCD输出缓冲器、高速缓冲器、光学时域反射法（OTDR）、高速有源滤波器、3D扫描仪、硅光电倍增器（SiPM）缓冲放大器以及光电倍增管后置放大器等场合。在光学飞行时间（ToF）系统中，OPA855与时间数转换器（如TDC7201）结合使用，而在高分辨率激光雷达系统中，它可以与差分输出放大器（如THS4541或LMH5401）配合，驱动高速模数转换器（ADC）。 **注意事项**：虽然TI提供了中文版的资料，但官方的英文数据表始终是最新的权威来源。在进行实际设计时，务必参考最新的英文版本以获取最准确的信息。 TI OPA855是一款高性能运算放大器，其出色的宽增益带宽积、低噪声和高速特性使其成为高速信号处理和精密测量应用的理想选择。在设计过程中，需要考虑输入电容、电源电压、噪声性能以及增益稳定性等因素，以确保最佳的系统性能。

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BIAS

3.8 V

5 V

REF

TDC7201

(Time-to-

Digital

Converter)

Pulsed Laser

Diode

Lens

BIAS

3.8 V

5 V

REF

Lens

MSP430

Controller

Start 1

Stop 1

Start 2

Stop 2

OPA855

Object

TLV3501

Photodiode capacitance (pF)

Closed-loop Bandwidth, f

-3dB

(MHz)

Integrated Input Referred Noise, I

(nA

RMS

)

0 2 4 6 8 10 12 14 16 18 20

50 0

100 20

150 40

200 60

250 80

300 100

350 120

400 140

450 160

D609

-3dB

, R

= 6 k:

-3dB

, R

= 12 k:

, R

= 6 k:

, R

= 12 k:

Product

Folder

Order

Now

Technical

Documents

Tools &

Software

Support &

Community

本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确

性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SBOS622

OPA855

ZHCSII6A –JULY 2018–REVISED OCTOBER 2018

OPA855 8GHz 增增益益带带宽宽积积、、7V/V 增增益益稳稳定定型型、、双双极极输输入入放放大大器器

1 特特性性

• 高增益带宽积：8GHz

• 解补偿，增益 ≥ 7V/V（稳定）

• 低输入电压噪声：0.98nV/√Hz

• 压摆率：2750V/μs

• 低输入电容：

– 共模：0.6pF

– 差动：0.2pF

• 宽输入共模范围：

– 与正电源相差 0.4V

– 与负电源相差 1.1V

• 3V

总输出摆幅

• 电源电压范围：3.3V 至 5.25V

• 静态电流：17.8mA

• 封装：8 引脚 WSON

• 温度范围：–40 至 +125°C

2 应应用用

• 高速跨阻放大器

• 激光测距

• CCD 输出缓冲器

• 高速缓冲器

• 光学时域反射法 (OTDR)

• 高速有源滤波器

• 3D 扫描仪

• 硅光电倍增器 (SiPM) 缓冲放大器

• 光电倍增管后置放大器

3 说说明明

OPA855 是一款具有双极输入的宽带低噪声运算放大

器，适用于宽带跨阻和电压放大器应用。将该器件配

置为跨阻放大器 (TIA) 时，8GHz 增益带宽积 (GBWP)

能够在低电容光电二极管应用中以高达几十千欧的跨阻

增益。

下图展示了在将 OPA855 配置为 TIA 时该放大器的带

宽和噪声性能与光电二极管电容的函数关系。计算总噪

声时的带宽范围为从直流到左轴上计算得出的频率 f。

OPA855 封装具有一个反馈引脚 (FB)，可简化输入和

输出之间的反馈网络连接。

OPA855 经过优化，可在光学飞行时间 (ToF) 系统中

运行，在该系统中 OPA855 与时数转换器（如

TDC7201）配合使用。可在具有差分输出放大器（如

THS4541 或 LMH5401）的高分辨率激光雷达系统中

使用 OPA855 来驱动高速模数转换器 (ADC)。

器器件件信信息息

(1)

器器件件编编号号封封装装封封装装尺尺寸寸（（标标称称值值））

OPA855 WSON (8) 2.00mm × 2.00mm

(1) 如需了解所有可用封装，请参阅数据表末尾的封装选项附录。

高高速速飞飞行行时时间间接接收收器器光光电电二二极极管管电电容容与与带带宽宽和和噪噪声声间间的的关关系系

OPA855

ZHCSII6A –JULY 2018–REVISED OCTOBER 2018

www.ti.com.cn

目目录录

1 特特性性.......................................................................... 1

2 应应用用.......................................................................... 1

3 说说明明.......................................................................... 1

4 修修订订历历史史记记录录 ........................................................... 2

5 Device Comparison Table..................................... 3

6 Pin Configuration and Functions......................... 3

7 Specifications......................................................... 4

7.1 Absolute Maximum Ratings ...................................... 4

7.2 ESD Ratings.............................................................. 4

7.3 Recommended Operating Conditions....................... 4

7.4 Thermal Information.................................................. 4

7.5 Electrical Characteristics .......................................... 5

7.6 Typical Characteristics.............................................. 7

8 Parameter Measurement Information ................ 14

8.1 Parameter Measurement Information ..................... 14

9 Detailed Description ............................................ 15

9.1 Overview ................................................................. 15

9.2 Functional Block Diagram ....................................... 15

9.3 Feature Description................................................. 16

9.4 Device Functional Modes........................................ 19

10 Application and Implementation........................ 20

10.1 Application Information.......................................... 20

10.2 Typical Application ............................................... 21

11 Power Supply Recommendations ..................... 23

12 Layout................................................................... 24

12.1 Layout Guidelines ................................................. 24

12.2 Layout Example .................................................... 24

13 器器件件和和文文档档支支持持 ..................................................... 26

13.1 器件支持................................................................ 26

13.2 文档支持................................................................ 26

13.3 接收文档更新通知 ................................................. 26

13.4 社区资源................................................................ 26

13.5 商标 ....................................................................... 26

13.6 静电放电警告......................................................... 26

13.7 术语表 ................................................................... 26

14 机机械械、、封封装装和和可可订订购购信信息息....................................... 26

4 修修订订历历史史记记录录

Changes from Original (July 2018) to Revision A Page

• 已更改将“预告信息”更改成了“生产数据（有效）” .................................................................................................................. 1

OPA855

ZHCSII6A –JULY 2018–REVISED OCTOBER 2018

www.ti.com.cn

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Long-term continuous output current for electromigration limits.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN MAX UNIT

Total supply voltage (V

S+

– V

S–

) 5.5 V

IN+

, V

IN–

Input voltage (V

S–

) – 0.5 (V

S+

) + 0.5 V

Differential input voltage 1 V

OUT

Output voltage (V

S–

) – 0.5 (V

S+

) + 0.5 V

Continuous input current ±10 mA

OUT

Continuous output current

(2)

±100 mA

Junction temperature 150 °C

Operating free-air temperature –40 125 °C

stg

Storage temperature –65 150 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE UNIT

(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001

(1)

±1500

Charged-device model (CDM), per JEDEC specification JESD22-C101

(2)

±1500

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

Total supply voltage (V

S+

– V

S–

) 3.3 5 5.25 V

Operating free-air temperature –40 125 °C

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC

(1)

OPA855

UNITDSG (WSON)

8 PINS

θJA

Junction-to-ambient thermal resistance 80.1 °C/W

θJC(top)

Junction-to-case (top) thermal resistance 100 °C/W

θJB

Junction-to-board thermal resistance 45 °C/W

Junction-to-top characterization parameter 6.8 °C/W

Junction-to-board characterization parameter 45.2 °C/W

θJC(bot)

Junction-to-case (bottom) thermal resistance 22.7 °C/W

OPA855

www.ti.com.cn

ZHCSII6A –JULY 2018–REVISED OCTOBER 2018

(1) Current flowing into the input pin is considered negative

7.5 Electrical Characteristics

at V

S+

= 5 V, V

S–

= 0 V, G = 7 V/V, R

= 453 Ω, input common-mode biased at midsupply, R

= 200 Ω, output load is

referenced to midsupply, and T

= 25℃ (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

AC PERFORMANCE

SSBW Small-signal bandwidth V

OUT

= 100 mV

2.5 GHz

LSBW Large-signal bandwidth V

OUT

= 2 V

850 MHz

GBWP Gain-bandwidth product 8 GHz

Bandwdith for 0.1-dB flatness 200 MHz

SR Slew rate (10%-90%) V

OUT

= 2-V step 2750 V/µs

Rise time V

OUT

= 100-mV step 0.17 ns

Fall time V

OUT

= 100-mV step 0.17 ns

Settling time to 0.1% V

OUT

= 2-V step 2.3 ns

Settling time to 0.001% V

OUT

= 2-V step 2600 ns

Overshoot or undershoot V

OUT

= 2-V step 5%

Overdrive recovery 2x output overdrive 3 ns

HD2 Second-order harmonic distortion

f = 10 MHz, V

OUT

= 2 V

dBc

f = 100 MHz, V

OUT

= 2 V

HD3 Third-order harmonic distortion

f = 10 MHz, V

OUT

= 2 V

dBc

f = 100 MHz, V

OUT

= 2 V

Input-referred voltage noise f = 1 MHz 0.98 nV/√Hz

Input-referred current noise f = 1 MHz 2.5 pA/√Hz

Closed-loop output impedance f = 1 MHz 0.15 Ω

DC PERFORMANCE

Open-loop voltage gain 70 76 dB

Input offset voltage T

= 25°C –1.5 ±0.2 1.5 mV

ΔV

/ΔT Input offset voltage drift T

= –40°C to 125°C 0.5 µV/°C

Input bias current

(1)

= 25°C –18.5 –12 –5 µA

ΔI

/ΔT Input bias current drift T

= –40°C to +125°C –0.08 µA/°C

BOS

Input offset current T

= 25°C –1 ±0.1 1 µA

ΔI

BOS

/ΔT Input offset current drift T

= –40°C to +125°C 1 nA/°C

CMRR Common-mode rejection ratio V

= ±0.5 V referred to midsupply 90 100 dB

INPUT

Common-mode input resistance 2.3 MΩ

Common-mode input capacitance 0.6 pF

Differential input resistance 5 kΩ

DIFF

Differential input capacitance 0.2 pF

Common-mode input range (high) CMRR > 80 dB, V

S+

= 3.3 V 2.7 2.9 V

Common-mode input range (low) CMRR > 80 dB, V

S+

= 3.3 V 1.1 1.3 V

Common-mode input range (high) CMRR > 80 dB 4.4 4.6 V

Common-mode input range (high) T

= –40°C to +125 °C, CMRR > 80 dB 4.3 V

Common-mode input range (low) CMRR > 80 dB 1.1 1.3 V

Common-mode input range (low) T

= –40°C to +125°C, CMRR > 80 dB 1.3 V

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